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 JMnic
Product Specification
Silicon PNP Power Transistors
2SA877 2SA878
DESCRIPTION With TO-3 package High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION
Absolute maximum ratings(Ta=ae )
SYMBOL PARAMETER 2SA877 VCBO Collector-base voltage 2SA878 2SA877 VCEO Collector-emitter voltage 2SA878 VEBO IC PC Tj Tstg Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25ae Open collector Open base -120 -6 -10 100 150 -55~150 ae ae V A W Open emitter -120 -80 V CONDITIONS VALUE -80 V UNIT
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER 2SA877 V(BR)CEO Collector-emitter breakdown voltage 2SA878 V(BR)EBO VCEsat Emitter-base breakdown voltage Collector-emitter saturation voltage 2SA877 ICBO Collector cut-off current 2SA878 IEBO hFE COB fT Emitter cut-off current DC current gain Output capacitance Transition frequency VCB=-120V; IE=0 VEB=-6V; IC=0 IC=-3A ; VCE=-4V IE=0 ; VCB=-10V; f=1.0MHz IC=-1A ; VCE=-12V IE=-1mA ;IC=0 IC=-5A; IB=-0.5A VCB=-80V; IE=0 IC=-0.1A ;IB=0 CONDITIONS
2SA877 2SA878
SYMBOL
MIN -80
TYP.
MAX
UNIT
V -120 -6 -2.0 V V
-0.1
mA
-0.1 50 255 15
mA
pF MHz
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA877 2SA878
Fig.2 outline dimensions (unindicated tolerance:A
0.1mm)
3


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